Precision parts processing has many advantages, we have previously shared with you the specific advantages of precision parts processing, the most obvious is that you can achieve the high precision of ordinary processing can not reach, high precision also depends on precision processing equipment and accurate restraint system, and the use of precision masks as intermediates to achieve the amount of external surface material removed or added to make very fine control, then precision parts processing What are the characteristics? The following is a small part to give you a detailed introduction to the following.
A, precision parts cutting processing
There are mainly precision turning, mirror grinding and grinding. In the precision lathe with finely ground single crystal diamond turning tool to hold micro-turning, cutting thickness of only about 1 micron, commonly used in the processing of non-ferrous metal materials such as spherical, aspheric and flat mirrors and other high-precision, highly polished appearance of the parts.
Second, precision parts processing
Precision parts processing accuracy to nanometers, or even finally to the atomic unit (atomic lattice distance of 0.1 to 0.2 nanometers) as the goal, ultra-precision parts cutting and processing methods can no longer adapt, it is necessary to resort to special precision parts processing methods, that is, the application of chemical energy, electrochemical energy, heat or electricity, etc., so that these energies beyond the joint energy between atoms, so as to remove part of the workpiece appearance of inter-atomic adhesion, The purpose of ultra-precision machining is achieved by applying chemical, electrochemical, thermal or electrical energy, etc., so that these energies exceed the inter-atomic union energy, thus removing part of the inter-atomic adhesion, union or lattice deformation of the workpiece exterior. These processes include mechanochemical polishing, ion sputtering and ion implantation, electron beam exposure, laser beam processing, metal vapor deposition, and molecular beam epitaxy.